The main purpose of LED chip manufacturing is to manufacture effective and reliable low-ohm contact electrodes, and to meet the relatively small voltage drop between contactable materials and provide pressure pads for bonding wires, while emitting as much light as possible. The film transition process generally uses the vacuum evaporation method, under 4Pa high vacuum, the material is melted by resistance heating or electron beam bombardment heating, and becomes metal vapor deposition on the surface of the semiconductor material under low pressure.
Generally used P-type contact metals include alloys such as AuBe and AuZn, and AuGeNi alloys are often used as contact metals on the N surface. The alloy layer formed after coating also needs to expose the light-emitting area as much as possible through the photolithography process, so that the remaining alloy layer can meet the requirements of effective and reliable low-ohm contact electrodes and welding wire pressure pads. After the photolithography process, an alloying process is required, and the alloying is usually carried out under the protection of H2 or N2. The time and temperature of alloying are usually determined according to the characteristics of the semiconductor material and the form of the alloy furnace. If the chip electrode process such as blue and green is more complicated, it is necessary to increase the growth of passivation film and plasma etching process.